21049355-101 Part with NSN 5962-01-358-4069 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor – Buy Now

Part Number:21049355-101

Alternate P/N:21049355101

NSN: 5962-01-358-4069 (5962013584069)

Item Name: Microcircuit Memory

Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor

CAGE Code:81395

FSC:FSC 5962 Microcircuits Electronic

NIIN: 013584069

Good news, part number 21049355-101 with NSN 5962013584069 is now available. This part number 21049355-101 is manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor and is described as Microcircuit Memory. Do you need a quick quote for 21049355-101? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.

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NSN Information for Part Number 21049355-101 with NSN 5962-01-358-4069, 5962013584069

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-358-4069 Item Description: Microcircuit Memory	5962	013584069	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
21049355-101	5	2	3

Characteristics Data of NSN 5962-01-358-4069, 5962013584069

MRC	Criteria	Characteristic
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-40 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	ADAT	BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE
MEMORY	CZEP	CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM
MEMORY	ADAQ	BODY LENGTH2 096 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN38 INPUT
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC

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