310132P1 Part with NSN 5962-00-530-4905 by Bae Systems Information And Electronic Systems Integration Inc – Buy Now

Name: Part Number 310132P1 - Microcircuit Memory
Brand: Bae Systems Information And Electronic Systems Integration Inc
SKU: 310132p1
Availability: InStock
Rating: 4.6 (226 reviews)

Part Number: 310132P1

NSN: 5962-00-530-4905 (5962005304905)

Item Name: Microcircuit Memory

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

CAGE Code: 94117

FSC: 5962 Microcircuits Electronic

NIIN: 005304905

Good news, part number 310132P1 with NSN 5962005304905 is now available. This part number 310132P1 is manufactured by Bae Systems Information And Electronic Systems Integration Inc and is described as Microcircuit Memory. Do you need a quick quote for 310132P1? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.

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NSN Information for Part Number 310132P1 with NSN 5962-00-530-4905, 5962005304905

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-00-530-4905 Item Description: Microcircuit Memory	5962	005304905	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	U
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
310132p1	2	2	3

Characteristics Data of NSN 5962-00-530-4905, 5962005304905

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 250 INCHES NOMINAL
MEMORY	ADAT	BODY WIDTH0 520 INCHES NOMINAL
MEMORY	ADAU	BODY HEIGHT0 160 INCHES NOMINAL
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND BIPOLAR AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND WDECODED OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMP-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN11 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT94117-310132 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTING GE
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

606-0038-901

RFQ

MS16627-1125

RFQ

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