G8509.B01 Part with NSN 5962-01-240-6660 by Bae Systems Information And Electronic Systems Integration Inc – Buy Now

Name: Part Number G8509.B01 - Microcircuit Memory
Brand: Bae Systems Information And Electronic Systems Integration Inc
SKU: g8509-b01
Availability: InStock
Rating: 4.6 (226 reviews)

Part Number: G8509.B01

Alternate P/N: G8509B01

NSN: 5962-01-240-6660 (5962012406660)

Item Name: Microcircuit Memory

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

CAGE Code: 94117

FSC: 5962 Microcircuits Electronic

NIIN: 012406660

Good news, part number G8509.B01 with NSN 5962012406660 is now available. This part number G8509.B01 is manufactured by Bae Systems Information And Electronic Systems Integration Inc and is described as Microcircuit Memory. Do you need a quick quote for G8509.B01? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.

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NSN Information for Part Number G8509.B01 with NSN 5962-01-240-6660, 5962012406660

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-240-6660 Item Description: Microcircuit Memory	5962	012406660	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
G8509.B01	2	1	5

Characteristics Data of NSN 5962-01-240-6660, 5962012406660

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 760 INCHES NOMINAL
MEMORY	ADAT	BODY WIDTH0 270 INCHES NOMINAL
MEMORY	ADAU	BODY HEIGHT0 150 INCHES NOMINAL
MEMORY	AFGA	OPERATING TEMP RANGE0 075 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

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