Good news, part number G8509.B01 with NSN 5962012406660 is now available. This part number G8509.B01 is manufactured by Bae Systems Information And Electronic Systems Integration Inc and is described as Microcircuit Memory. Do you need a quick quote for 5962012406660? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-240-6660 Item Description: Microcircuit Memory | 5962 | 012406660 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G8509.B01 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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