Good news, part number CY7C429-30DMB with NSN 5962013655109 is now available. This part number CY7C429-30DMB is manufactured by E2v Inc and is described as Microcircuit Memory. Do you need a quick quote for CY7C429-30DMB? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-365-5109 Item Description: Microcircuit Memory | 5962 | 013655109 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Cy7c429-30dmb | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.430 INCHES MINIMUM AND 1.485 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 1430010876330 E/I FSCM 18876 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL,CMOS,2K X 9 FIRST-IN FIRST-OUT,MONOLITHIC SILCON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| TEST | TEST DATA DOCUMENT | 67268-5962-88669 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 96906-MIL-STD-883 GOVERNMENT STANDARD |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAU | BODY HEIGHT | 0.155 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
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