Good news, part number 5R8067-007-0001 with NSN 5962012608672 is now available. This part number 5R8067-007-0001 is manufactured by Hamilton Sundstrand Corporation and is described as Microcircuit Memory. Do you need a quick quote for 5R8067-007-0001? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-260-8672 Item Description: Microcircuit Memory | 5962 | 012608672 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5r8067-007-0001 | 3 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 375 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALMETAL OR PLASTIC OR CERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC80 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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