Good news, part number 1N670 with NSN 5961000658598 is now available. This part number 1N670 is manufactured by Microsemi Corp and is described as Semiconductor Devic. Do you need a quick quote for 1N670? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM ALL TRANSISTOR AND 0.300 INCHES MAXIMUM ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.130 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 68.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 54.00 MILLIAMPERES FORWARD CURRENT, AVERAGE OUTSIDE DIAMETER ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| FEAT | SPECIAL FEATURES | IF ONE OF THE MATCHED PAIR REQUIRES REPLACEMENT,BOTH MUST BE REPLACED |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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