G308218 1 Part with NSN 5962-01-226-3931 by Raytheon Company – Buy Now

Name: Part Number G308218 1 - Microcircuit Memory
Brand: Raytheon Company
SKU: g308218-1
Availability: InStock
Rating: 4.6 (226 reviews)

Part Number: G308218 1

Alternate P/N: G3082181

NSN: 5962-01-226-3931 (5962012263931)

Item Name: Microcircuit Memory

Manufacturer: Raytheon Company

CAGE Code: 54X10

FSC: 5962 Microcircuits Electronic

NIIN: 012263931

Good news, part number G308218 1 with NSN 5962012263931 is now available. This part number G308218 1 is manufactured by Raytheon Company and is described as Microcircuit Memory. Do you need a quick quote for G308218 1? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.

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NSN Information for Part Number G308218 1 with NSN 5962-01-226-3931, 5962012263931

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-226-3931 Item Description: MICROCIRCUIT,MEMORY	5962	012263931	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
A584A603-101	2	1	C			C

Characteristics Data of NSN 5962-01-226-3931, 5962012263931

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 050 INCHES MINIMUM AND 1 110 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 360 INCHES MINIMUM AND 0 405 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 175 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDSTATIC OPERATION AND HERMETICALLY SEALED AND HIGH SPEED
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN14 INPUT
MEMORY	CRHL	BIT QUANTITY1024
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC25 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 25 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT

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G308218-1

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