Good news, part number MMBZ20VALT1G with NSN 5961016607000 is now available. This part number MMBZ20VALT1G is manufactured by Semiconductor Components Industries and is described as Semiconductor Devices Unitized. Do you need a quick quote for 5961016607000? We can help! Our ready-to-ship stock is comprised of over 2 billion NSN items.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-660-7000 Item Description: Semiconductor Devices Unitized | 5961 | 016607000 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Mmbz20valt1g | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY | Mounting Method | TERMINAL |
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| AFZC | Function For Which Designed | TRANSIENT SUPPRESSOR AND ZENER DIODE |
| ABKW | Overall Height | 0.039 INCHES NOMINAL |
| TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
| CTMZ | Semiconductor Material | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| MRC | Decoded Requirement | Clear Text Reply |
| ABHP | Overall Length | 0.114 INCHES NOMINAL |
| ABBH | Inclosure Material | PLASTIC |
| ABMK | Overall Width | 0.094 INCHES NOMINAL |
| ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE PHOTO |
| CTMZ | Semiconductor Material | SILICON 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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